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01 / Imaging

X-ray Image Sensors

We develop everything in-house, from semiconductor design through chiplet integration to finished camera devices. Building on our current CdTe PhotonCounting FPD, we plan to expand into larger formats using tiling technology.

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01 / Imaging

X-ray Image Sensors

We develop everything in-house, from semiconductor design through chiplet integration to finished camera devices. Building on our current CdTe PhotonCounting FPD, we plan to expand into larger formats using tiling technology.

Composite image of the CdTe PhotonCounting FPD unit and an X-ray imaging demo
PRODUCT · 01

CdTe PhotonCounting FPD

  • SensorCdTe
  • Detection methodDirect conversion / photon counting
  • Active imaging area115.2 x 115.2mm
  • StatusEngineering sample
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Product image of the CdTe PhotonCounting Line Sensor (3D model)
PRODUCT · 02

CdTe PhotonCounting Line Sensor

  • SensorCdTe
  • Detection methodDirect conversion / photon counting
  • StatusIn development
Learn more →
Illustration of the 3D CMOS FPD stacked structure (partitioned scintillator stacked on readout CMOS)
PRODUCT · 03

3D CMOS FPD

  • SensorPartitioned GoS / Partitioned CsI
  • Detection methodIndirect conversion / integrating
  • StatusIn development
Learn more →
SERVICES

Contract Measurement and Imaging

We offer contract measurement using the CdTe PhotonCounting FPD and scintillator-based FPDs. For sample evaluations with sensors in development (such as 3D CMOS), see the imaging examples on each product page.

Layout of the X-ray source, sample and detector, with example outputs of a transmission image and a CT cross-section
  • Supported detection methodsBoth CdTe direct conversion and scintillator-based
  • ApplicationsAny imaging need our existing products can cover, including non-destructive testing and material identification

→ See more imaging examples (Gallery)

PROCESS

Development and Manufacturing Process

From the semiconductor design at the core of the detector, through chiplet integration, to completion as a camera device. By handling every step of building Imaging products in-house, we can tailor specifications to each application.

01 / PROCESS

Semiconductor Design

Cross-section of junction formation by laser doping

CdTe crystals and electrodes are bonded by low-temperature, low-pressure laser doping, and pixel-level devices are fabricated by combining deposition, photolithography and plating.

  • Low-temperature processEliminates thermal damage that degrades crystal properties, preserving CdTe detection performance.
  • Low-pressure bondingMinimizes mechanical stress on delicate semiconductors, preventing cracking and deformation.
02 / PROCESS

Chiplet Integration

Integration technology that bonds dissimilar semiconductors, the detector element and the ASIC, so they function as a single sensor.

  • Device process
    Photo of a sensor tile with gold flex cables extending on all sides
    Pixel device fabrication using deposition, photolithography, plating and laser doping.
  • ASIC development and processing
    Photo of an evaluation board with a readout integrated circuit (ASIC) mountedMicrograph of a bump array
    Readout integrated circuit development that accounts for device characteristics and package structure. TSV processing for back-side readout.
  • Integration process
    Cross-sectional SEM image of an Ag paste bump joint
    Formation of bumps of 20μmΦ or less using printing and plating, plus 2.5D/3D integration.
03 / PROCESS

Camera Device Assembly

Composite image of the CdTe PhotonCounting FPD unit and an X-ray imaging demo

The bonded sensors and ASICs are tiled and assembled into a camera device. Tiling technology makes it possible to offer products in different sizes by combining the same base modules.

04 / PROCESS

Evaluation and Volume Production

Photo of an inspection robot installed on plant piping

From sensor crystals to complete systems, we carry out most processes in-house (competitors mainly rely on purchasing and outsourcing). Prototyping and contract work are also handled in-house. The photo shows an inspection robot applying our sensor technology in real-world operation (installed on plant piping).

TECHNOLOGY

Tiling

Because readout circuit signals are routed to the back side through TSVs, modules can be butted together on all four sides and arranged with virtually no seams. Simply changing the number of identical base modules expands the size of the imaging area.

Cross-section and top-view comparison showing that conventional edge-wired modules leave pixel-free bands between modules, whereas TSV back-side readout allows modules to be butted together on all four sides
With edge wiring, pixel-free bands form between modules. With back-side readout, modules can be butted together on all four sides.

→ See the plan for size expansion through tiling (CdTe PhotonCounting FPD)

Technical Consultation and Sample Evaluation

We handle everything from CdTe PhotonCounting FPD sample evaluations to inquiries about roadmap products and customization.

Technical consultation and sample evaluationView the imaging gallery

ANSeeN Inc. / TEL: 053-522-7708 / Contact: https://anseen.com/contact/

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